data sheet no. pd10023e series pvd10 microelectronic power ic
single-pole, 160ma, 0-100v dc general description the photovoltaic dc relay (pvd) is a single-pole, normally open solid state replacement for electro- mechanical relays used for general purpose switch- ing of analog signals. it utilizes as an output switch a unique bidirectional (ac or dc) mosfet power ic termed a bosfet. the bosfet is controlled by a photovoltaic generator of novel construction, which is energized by radiation from a dielectrically iso- lated light emitting diode (led). the pvd overcomes the limitations of both conven- tional and reed electromechanical relays by offering the solid state advantages of long life, high operat- ing speed, low pick-up power, bounce-free opera- tion, low thermal voltages and miniaturization. these advantages allow product improvement and design innovations in many applications such as process control, multiplexing, telecommunications, automatic test equipment and data acquisition. the pvd can switch analog signals from thermo- couple level to 100 volts peak dc. signal frequen- cies into the rf range are easily controlled and switching rates up to 18khz are achievable. the extremely small thermally generated offset voltages allow increased measurement accuracies. unique silicon technology developed by international rectifier forms the heart of the pvd. the monolithic bosfet contains a bidirectional n-channel power mosfet output structure. in addition, this power ic chip has input circuitry for fast turn-off and gate protection functions. this section of the bosfet chip utilizes both bipolar and mos technology to form npn transistors, p-channel mosfets, resistors, diodes and capacitors. the photovoltaic generator similarly utilizes a unique international rectifier alloyed multijunction structure. the excellent current conversion efficiency of this technique results in the very fast response of the pvd microelectronic power ic relay. this advanced semiconductor technology has cre- ated a radically new control device. designers can now develop switching systems to new standards of electrical performance and mechanical compactness. features bosfet power ic 10 10 operations 25sec operating time 3 milliwatts pick-up power 1000v/sec dv/dt bounce-free 8-pin dip package -40c to 85c ul recognized part identification part number operating sensitivity off-state voltage (dc) resistance PVD1052 10 8 ohms 0 ? 100v 5 ma pvd1054 10 10 ohms
replaced by pvd13n
2 replaced by pvd13n input characteristics PVD1052 pvd1054 units minimum control current (see figures 1 and 2) dc for 80ma continuous load current 2.0 ma@25c for 130ma continuous load current 5.0 ma@40c for 50ma continuous load current 5.0 ma@80c maximum control current for off-state resistance at 25c 10 a(dc) control current range (caution: current limit input led. see figure 6) 2.0 to 25 ma(dc) maximum reverse voltage 7.0 v(dc) electrical specifications (-40 c t a +85 c unless otherwise specified ) general characteristics (PVD1052 and pvd1054) units dielectric strength: input-output 2500 v rms insulation resistance: input-output @ 90v dc 10 12 @ 25c - 50% rh ? maximum capacitance: input-output 1.0 pf max. pin soldering temperature (1.6mm below seating plane, 10 seconds max.) +260 ambient temperature range: operating -40 to +85 c storage -40 to +100 output characteristics PVD1052 pvd1054 units operating voltage range 0 to 100 v (rms) maxiumum load current 40c (see figures 1and 2) 160 ma (dc) response time @25c (see figures 7 and 8) max. t (on) @ 12ma control, 50 ma load, 50 vdc, 0 to 90% 25 s max. t (off) @ 12ma control, 50 ma load, 50 vdc, 100% to 10% 15 s max. on-state resistance 25c (pulsed) (fig. 4) 50 ma load, 5ma control 8.0 ? min. off-state resistance 25c @ 80 vdc (see figure 5) 10 8 10 10 ? max. thermal offset voltage @ 5.0ma control 0.2 volts min. off-state dv/dt 1000 v/s output capacitance 8.0 pf @ 50vdc
3 replaced by pvd13n max. load current ma figure 1. current derating curves figure 2. typical control current requirements figure 3.typical on characteristics figure 4. typical on-resistance input current (ma) i led (ma) led forward voltage drop (volts dc) max. load current ma ambient temperature (c) load current (ma) v ds (volts)
4 replaced by pvd13n i d off/i d off 25c figure 5. normalized off-state leakage figure 6. input characteristics (current controlled) figure 7.typical delay times figure 8. delay time definitions led forward voltage drop (volts dc) input current (ma) ambient temperature (c) i led (ma) delay time (microseconds)
5 replaced by pvd13n figure 9. typical output capacitance typical capacitance (picofarads) v dd drain to drain voltage wiring diagram
6 replaced by pvd13n case outline
mechanical specifications: package: 8-pin dip tolerances: .015 (.38) unless otherwise specified case material: molded epoxy weight: .07 oz. (2 gr.) world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105 http://www.irf.com/ data and specifications subject to change without notice. 12/6/2000
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